WS-200
直线/曲线或特定位置开槽，钻孔皆可实现。
为全自动设备，最大工作范围为8吋晶圆：
-冷加工，实现无崩边，不脱层，不伤底材及低（或无）残留的加工。
-加工能力强，直线/曲线或特定位置开槽，钻孔皆可实现。-针对开槽的应用，特别容易实现宽沟槽或深沟槽。
-适用多种材料，如Si，低k，GaN，SiOx，SiNx，Al，Cu，Ni，SiC，Sapphire，EMC…。等。
-多重操作方式，可参数式设定或载入DXF档定义加工路径。
-任选配：
•CO2 Snow實现完全无残留的加工。
•等离子模块实现高强度晶粒。-通过Semi-S2认证。
满足现在及未来的生产需求。|
Workpiece |
Diameter |
8” wafer-form |
|
Flattening mechanism |
<6mm, |
|
|
Laser & Optics |
Type |
Femto-second laser |
|
Power |
<15W |
|
|
Repetition rate |
<1MHz |
|
|
Processing speed |
<2000mm/sec |
|
|
In-situ power monitor |
||
|
Moving stage |
Working area |
210x210mm max. |
|
Speed |
1000mm/sec, max. |
|
|
Resolution |
0.1um |
|
|
Position accuracy |
<3um |
|
|
Z-axis |
Stroke |
+/- 3 mm |
|
Repeatability |
1um, single direction |
|
|
θ-axis |
Stroke |
<190° |
|
Repeatability |
<2 arc-sec |
|
|
Vision |
Quantity |
High & low magnification |
|
Resolution |
0.56um for high magnification |
|
|
Spin Processor |
Spin speed |
<3000rpm |
|
Clean nozzle |
High pressure or Atomizer nozzle selectable |
|
|
Coating nozzle |
flow-rate controlled |
|
|
Drying nozzle |
Pressure regulated |
|
|
CO2 snow processor |
Function |
Debris & residue removal |
|
Spin speed |
<3000rpm |
|
|
CO2 consumption |
<100g/min., |
|
|
Plasma processor |
Function |
Defect, debris & residue removal |
|
Working pressure |
<200 mtorr |
|
|
Processing gas |
CF4/SF6 |
|
|
MW power |
<3000W |
|