WS-200
直线/曲线或特定位置开槽,钻孔皆可实现。
为全自动设备,最大工作范围为8吋晶圆:
-冷加工,实现无崩边,不脱层,不伤底材及低(或无)残留的加工。
-加工能力强,直线/曲线或特定位置开槽,钻孔皆可实现。-针对开槽的应用,特别容易实现宽沟槽或深沟槽。
-适用多种材料,如Si,低k,GaN,SiOx,SiNx,Al,Cu,Ni,SiC,Sapphire,EMC…。等。
-多重操作方式,可参数式设定或载入DXF档定义加工路径。
-任选配:
•CO2 Snow實现完全无残留的加工。
•等离子模块实现高强度晶粒。-通过Semi-S2认证。
满足现在及未来的生产需求。
Workpiece |
Diameter |
8” wafer-form |
Flattening mechanism |
<6mm, |
|
Laser & Optics |
Type |
Femto-second laser |
Power |
<15W |
|
Repetition rate |
<1MHz |
|
Processing speed |
<2000mm/sec |
|
In-situ power monitor |
||
Moving stage |
Working area |
210x210mm max. |
Speed |
1000mm/sec, max. |
|
Resolution |
0.1um |
|
Position accuracy |
<3um |
|
Z-axis |
Stroke |
+/- 3 mm |
Repeatability |
1um, single direction |
|
θ-axis |
Stroke |
<190° |
Repeatability |
<2 arc-sec |
|
Vision |
Quantity |
High & low magnification |
Resolution |
0.56um for high magnification |
|
Spin Processor |
Spin speed |
<3000rpm |
Clean nozzle |
High pressure or Atomizer nozzle selectable |
|
Coating nozzle |
flow-rate controlled |
|
Drying nozzle |
Pressure regulated |
|
CO2 snow processor |
Function |
Debris & residue removal |
Spin speed |
<3000rpm |
|
CO2 consumption |
<100g/min., |
|
Plasma processor |
Function |
Defect, debris & residue removal |
Working pressure |
<200 mtorr |
|
Processing gas |
CF4/SF6 |
|
MW power |
<3000W |