• WS-200

WS-200

为全自动设备,最大工作范围为8吋晶圆,
直线/曲线或特定位置开槽,钻孔皆可实现。

为全自动设备,最大工作范围为8吋晶圆: 

    -冷加工,实现无崩边,不脱层,不伤底材及低(或无)残留的加工。

    -加工能力强,直线/曲线或特定位置开槽,钻孔皆可实现。
    -针对开槽的应用,特别容易实现宽沟槽或深沟槽。
    -适用多种材料,如Si,低k,GaN,SiOx,SiNx,Al,Cu,Ni,SiC,Sapphire,EMC…。等。
    -多重操作方式,可参数式设定或载入DXF档定义加工路径。

    -任选配:

         •CO2 Snow實现完全无残留的加工。

        •等离子模块实现高强度晶粒。

    -通过Semi-S2认证

满足现在及未来的生产需求。

Workpiece

Diameter

8” wafer-form

Flattening mechanism
(Optional)

<6mm, 
Warpage suppression

Laser & Optics

Type

Femto-second laser

Power

<15W

Repetition rate

<1MHz

Processing speed

<2000mm/sec

In-situ power monitor

Moving stage

Working area

210x210mm max.

Speed

1000mm/sec, max.

Resolution

0.1um

Position accuracy

<3um

Z-axis

Stroke

+/- 3 mm

Repeatability

1um, single direction

θ-axis

Stroke

<190°

Repeatability

<2 arc-sec

Vision

Quantity

High & low magnification

Resolution

0.56um for high magnification

Spin Processor

Spin speed

<3000rpm

Clean nozzle

High pressure or Atomizer nozzle selectable

Coating nozzle

flow-rate controlled

Drying nozzle

Pressure regulated

CO2 snow processor
(Optional)

Function

Debris & residue removal

Spin speed

<3000rpm

CO2 consumption

<100g/min.,
Siphon type Bombe

Plasma processor
(Optional)

Function

Defect, debris & residue removal

Working pressure

<200 mtorr

Processing gas

CF4/SF6

MW power

<3000W